MJE243

 MJE243

Complementary Silicon Power Plastic Transistors

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features

•High Collector−Emitter Sustaining Voltage − VCEO(sus)= 100 Vdc (Min)

•High DC Current Gain @ IC = 200 mAdc hFE= 40−200 = 40−120

•Low Collector−Emitter Saturation Voltage − VCE(sat)= 0.3 Vdc (Max) @ IC = 500 mAdc

•High Current Gain Bandwidth Product − fT= 40 MHz (Min) @ IC = 100 mAdc

•Annular Construction for Low Leakages ICBO= 100 nAdc (Max) @ Rated VCB