OnSemi
BC550CG
BC550CGThe BC550CG is an NPN low noise Bipolar Transistor, designed for high gain, low noise general..
Lei0.95
BC560CG
BC560CGThe BC560CG is an PNP low noise Bipolar Transistor, designed for high gain, low noise general..
Lei0.95
2n5401
2N5401 - TRANSISTOR 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, 3 PIN, BIP G..
Lei0.55
2n5551
NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers ..
Lei0.55
2n5551
NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers ..
Lei0.55
MJE243
MJE243Complementary Silicon Power Plastic Transistors These devices are designed for low power..
Lei6.99
MJE15032G
Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audi..
Lei6.99
MJE15033G
Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audi..
Lei7.30
MJE15034G
Complementary Silicon Plastic Power Transistors TO−220 NPN & PNP Devices Complementary silicon p..
Lei6.69
MJ15015G
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS − 115, 180 WATTSMJ15015G..
Lei29.50
MJ21193G
Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technolog..
Lei35.99
MJ21194G
Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology a..
Lei35.99
MJ21196G
Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are sp..
Lei35.99