Transistors

Transistors


MJE15032G

MJE15032G

Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audi..

Lei6.99

MJE15033G

MJE15033G

Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audi..

Lei7.30

MJE15034G

MJE15034G

Complementary Silicon Plastic Power Transistors TO−220 NPN & PNP Devices Complementary silicon p..

Lei6.69

2N3866

2N3866

Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Specified 400 MHz, 28Vdc Characteristics..

Lei39.50

MJ15015G

MJ15015G

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS − 115, 180 WATTSMJ15015G..

Lei29.50

MJ21193G

MJ21193G

Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technolog..

Lei35.99

MJ21194G

MJ21194G

Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology a..

Lei35.99

MJ21196G

MJ21196G

Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are sp..

Lei35.99

MJL21193G

MJL21193G

Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are ..

Lei24.99

MJL21194G

MJL21194G

Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are ..

Lei24.99

MJL21195G

MJL21195G

Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are ..

Lei38.50

MJL21196G

MJL21196G

Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are ..

Lei38.50

MJL3281A

MJL3281A

 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200The MJL3281A and MJL1302A ..

Lei32.00

MJL3281AG

MJL3281AG

 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200The MJL3281A and MJL1302A ..

Lei25.99

MJL4281AG

MJL4281AG

Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBase p..

Lei27.50

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